单位：清华大学
潘 峰，清华大学材料学院教授、博士生导师
教育背景：
1991.2-1993.9 清华大学材料科学与工程系博士研究生
1983.9-1986.1 北京航空材料研究所硕士研究生
1979.9-1983.8 中南工业大学材料系读本科
工作履历：
1993.10 - 现在 清华大学材料学院（2012年前为材料科学与工程系）任副教授、教授（1996）、博士生导师（1998）
1998.10- 2010.1 清华大学先进材料教育部重点实验室主任
1998.1-2001.9 清华大学材料科学与工程系副主任
1997.3-2007.7 清华大学材料科学与工程研究院副院长
1986.2-1991.1 北京航空材料研究所任助理工程师、工程师、厂长等
学术兼职“十五”863新材料领域特种功能材料技术主题副组长，“十一五”863新材料领域专家，“十二五”863新材料领域新型电子材料与器件主题召集人
教育部高等学校材料科学与工程教学指导委员会委员（2007-）
北京市人民政府专家顾问团专家（2001-2012）
国际薄膜学会副理事长（2009-）
中国真空学会副理事长、薄膜专业委员会主任委员（2004- ）
中国材料研究学会常务理事 （2003-）、青年委员会主任（1999-2005）
中国晶体学会常务理事 （2004- ）
《航空材料学报》《真空科学与技术》《功能材料》《材料科学与工程》《表面工程》《Journal of Nanoscience Letters》等杂志编委
研究领域：
1. 薄膜材料结构与性能调控技术
2. 声表面波材料与器件
3. 阻变存储器材料与器件
4, 自旋电子学材料与器件
5, 离子束与材料相互作用
奖励与荣誉：
2012年 国家自然科学二等奖，氧化锌薄膜多功能化的结构与性能调控，第一获奖人
2009年 国家科学技术进步奖，移动通讯用滤波器关键技术及产业化，第二获奖人
2007年 国家技术发明二等奖，中高频声表面波关键材料及应用研究，第一获奖人
1999年 国家自然科学三等奖，离子束材料改性中若干基础问题的研究，第五获奖人
另外获2011年度教育部自然科学一等奖，2006年北京市科学技术进步奖一等奖、1998年北京市科学技术进步奖一等奖，2004年 中国真空学会真空科技成就奖等多项成果奖励
学术成果：
发表SCI论文200余篇；在国际学术会议作大会或邀请报告十余次，编著出版专著一部。申请发明专利31件，授权18件。
【代表性论文】
1. F. Pan, C. Song, X.J. Liu, Y. C. Yang, F. Zeng, Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films, Materials Science and Engineering R: Reports 62, 1 (2008). Materials Science and Engineering R: Reprots, 62（1）, 1-35(2008). “2008年中国百篇最具影响国际学术论文”
2. Y. C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application, Nano Letters, 9, 1636-1643(2009). “Highlight by NGP Asia Materials, Non-volatile memory: Silver switches, Published online 15 June 2009”
3. G. Chen, C. Song, C. Chen, S. Gao, F. Zeng, F. Pan, Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO, Advanced. Materials, 24, 3515-3520(2012).
4. Y. Y. Wang, C. Song, B. Cui, G. Y. Wang, F. Zeng, F. Pan, Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in antiferromagnet-based tunnel junction, Physical Review Letters, 109, 137201(2012).
5. C. Song, K. W. Geng, F. Zeng, X. B. Wang, Y. X. Shen, F. Pan, Giant magnetic moment in an anomalous ferromagnetic insulator: Co doped ZnO, Physical Review B, 73, 024405(2006).
【主要论文目录，按出版日期排序】
1. H. Y. Liu, F. Zeng, G. S. Tang, G. Y. Wang, C. Song, F. Pan, Significant enhancement in electromigration resistance and texture of aluminum films using an ultrathin titanium underlayer, Acta Materialia, 61(12), 4619-4624(2013).
2. G. S. Tang, F. Zeng, C. Chen, H. Y. Liu, S. Gao, C. Song, Y. S. Lin, G. Chen, F. Pan, Programmable Complementary Resistive Switching Behaviours of Plasma-oxidised Titanium Oxide Nanolayer, NanoScale, 5, 422-428(2013).
3. C. Chen, S. Gao, G. S. Tang, H. D. Fu, G. Y. Wang, C. Song, F. Zeng, F. Pan, Effect of electrode materials on AlN-based bipolar and complementary resistive switching, ACS Applied Materials & Interfaces, 5(5), 1793-1799(2013).
4. S. Gao, C. Song, C. Chen, F. Zeng, F. Pan, Formation process of conducting filament in planar organic resistive memory, Applied Physics Letters, 102, 141606(2013).
5. H. Y. Liu, F. Zeng, Y. S. Lin, G. Y. Wang, F. Pan，Correlation of oxygen vacancy variations to band gap changes in epitaxial ZnO thin films，Applied Physics Letters，102, 181908(2013).
6. G. S. Tang， F. Zeng*, C. Chen, S. Gao, H. D. Fu, C. Song, G. Y. Wang, F. Pan, Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation, Physica Status Solidi RRL, 7(4), 282-284(2013).
7. Z. S. Wang, F. Zeng, J. Yang, C. Chen, F. Pan, Resistive Switching Induced by Metailic Fillaments Formation Through Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate), ACS Applied Materials and Interfaces, 4, 4447-453(2012).
8. S. Gao, C. Song, C. Chen, F. Zeng, F. Pan, Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices, Journal of Physical Chemstry C, 116, 17955-17959(2012).
9. C. Chen, C. Song, J. Yang, F. Zeng, F. Pan, Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure, Applied Physics Letters, 100, 253509(2012).
10. C. Song, Y. Y. Wang, X. J. Li, G. Y. Wang, F. Pan, Interlayer magnetostatic coupling and linear magnetoresistance in [Pd/Co]/MgO/Co junction sensor, Applied Physics Letters, 101, 062404(2012).
11. D. C. Lin, C. Song, B. Cui, Y. Y. Wang, G. Y. Wang, F. Pan，Giant coercivity in perpendicularly magnetized cobalt monolayer, Applied Physics Letters, 101, 112405(2012).
12. F. Pan, J. T. Luo, Y. C. Yang, X. B Wang, F Zeng, Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO, SCIENCE CHINA Technological Sciences, 55,(2), 421-436(2012).
13. Y. C. Yang, X. X. Zhang, M. Gao, F. Zeng, W. Y. Zhou, S. S. Xie, F. Pan, Nonvolatile resistive switching in single crystalline ZnO nanowires, Nanoscale, 3, 1917(2011).
14. Y. C. Yang, F. Pan, F. Zeng, Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating, New Journal of Physics, 12, 023008(2010).
15. J. T. Luo, Y. C. Yang, X. Y. Zhu, G. Chen, F. Zeng, F. Pan, Enhanced electromechanical response by modulating Fe chemical state and ionic size in Fe-doped ZnO films, Physical Review B, 82, 014116(2010).
16. C. Chen, Y. C. Yang, F. Zeng, F. Pan, Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device, Applied Physics Letters, 97, 083502(2010).
17. Z. S. Wang, J. Yang, C. Chen, Y. C. Yang, F. Pan, Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly (styrenesulfonate)/Al structure, Applied Physics Letters, 97, 253301(2010).
18. F. Pan, C. Chen, Z. S. Wang, Y. C. Yang, J. Yang, F. Zeng, Nonvolatile resistive switching memories-characteristics, mechanisms and challenges, Progress in Natural Science -Materials International , 20(1), 1-15(2010).
19. C. Song, C. Z. Wang, X. J. Liu, F. Zeng, F. Pan, Room temperature ferromagnetism in cobalt-doped LiNbO3 single crystalline films, Crystal Growth & Design, 9(2), 1235-1239( 2009).
20. P. Y. Yang, X. Y. Zhu, F. Zeng, F. Pan, Interlayer Magnetostatic Coupling Induced Co Layer Coercivity Enhancement and Exchange Bias in [Pd/Co]/Cu/Co Spin Valves, Applied Physics Letters, 95，172512(2009).
21. G. Chen, F. Zeng, F. Pan, Enhanced spin injection and voltage bias in (Zn,Co)O/MgO/(Zn,Co)O magnetic tunnel junctions, Applied Physics Letters, 95，95, 232508( 2009).
22. Y. C. Yang, C. Song, X. H. Wang, F. Zeng, F. Pan, Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films, Applied Physics Letters, 92, 012907(2008).
23. P. Y. Yang, C. Song, F. Zeng, F. Pan，Tuning the training effect in exchange biased NiO/Ni bilayers，Applied Physics Letters, 92, 243113(2008).
24. C. Song, C. Z. Wang, Y. C. Yang, X. J. Liu, F. Zeng, F. Pan, Room temperature ferromagnetism and ferroelectricity in Co-doped LiNbO3 film, Applied Physics Letters, 92，262901(2008).
25. S. P. Wen, R. L. Zong, F. Zeng, Y. Gao, F. Pan, Evaluating modulus and hardness enhancement in evaporated Cu/W multilayers, Acta Materialia, 55, 345-351(2007).
26. Y. C. Yang, C. Song, F. Zeng, F. Pan, Y. N. Xie, T. Liu, V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films, Applied Physics Letters, 90, 242903(2007).
27. C. Song, X. J. Liu, F. Zeng, F. Pan，Fully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O junction and its tunnel magnetoresistance, Applied Physics Letters, 91, 042106 (2007) .
28. C. Song, F. Zeng, K. W. Geng, X. J. Liu, F. Pan, Substrate-dependent magnetization in Co-doped ZnO insulating films, Physical Review B, 76, 045215 (2007).
29. C. Song, Y. C. Yang, X. W. Li, X. J. Liu, F. Zeng, F. Pan, Anomalous voltage dependence of tunnel magnetoresistance in (Zn,Co)O-based junction with double-barrier, Applied Physics Letters, 91,172109(2007).
30. C. Song, F. Zeng, Y. X. Shen, K. W. Geng, Y, N. Xie，Z. Y. Wu, F. Pan, Local Co structure and ferromagnetism in ion-implanted Co-doped LiNbO3, Physical Review B, 73, 172412(2006).
31. C. Song, X. X. Wei, K. W. Geng, F. Zeng, F. Pan, Magnetic-moment enhancement and sharp positive magnetoresistance in Co/Ru multilayers, Physical Review B, 72, 184412(2005).
32. B. Zhao, G. H. Yang, F. Zeng, F. Pan, Irradiation induced alloying and formation of amorphous films in Co-Mo system during ion beam assisted deposition, Acta Materialia, 51(17), 5093-5099(2003).
33. F. Pan, M. Zhang, M. Ding, B. X. Liu, Y. M. Zhou, D. S. Wang, Metastable rhombohedral Fe phase formed in Fe-Sb multilayers and its magnetic property, Physical Review B, 59(17), 11458(1999).
34. F. Pan, Y. G. Chen, B.X.Liu, Spontaneous vitrification in Au-Ta system with small atomic size difference, Applied Physics Letters, 67(6), 780(1995).
35. B. X. Liu, F. Pan, Magnetic properties of vapor deposited iron noble metal multilayers, Physical Review B, 48, 10276(1993).
【授权发明专利】
1. 高频声表面波器件金属薄膜的制造方法。专利号：ZL200410097198.6，发明人：潘峰，李冬梅，王旭波，曾飞。
2. 金刚石声表面波器件多层膜结构的制作方法。专利号：ZL200410096819.9, 发明人：潘峰，李冬梅，曾飞，王旭波。
3. 具有抗电迁移的高频声表面波器件金属合金薄膜。专利号：ZL200510076884X, 发明人：潘峰，李冬梅，曾飞，王旭波。
4. 一种表面纳米晶化改性的方法。专利号：ZL200510011856.X， 发明人：曾飞，潘峰，李冬梅，文胜平。
5. 一种轴瓦表面过渡层、减摩层制备方法。专利号：ZL200510001076.7，发明人：曾飞，潘峰，李冬梅，文胜平。
6. 一种在柔性基材上沉积磁性薄膜的方法。专利号：ZL200710142929.8, 发明人：曹瑜，李新宇，潘峰，李晓伟。
7. 一种凹印版及其制作方法和真空沉积镀膜装置。专利号：ZL200710301411.4，发明人：刘永江，李晓伟，曾飞，潘峰，桂应琪，李万里。
8. 一种防伪薄膜及其制作方法，ZL200710105777.4。专利号：发明人：李新宇，李晓伟，潘峰，曾飞，曹瑜，杨惊，彭榕。
9. 声表面波气体传感器的制造方法，ZL200710064333.0。专利号：发明人：李强，李冬梅，潘峰。
10. 一种防伪功能薄膜及包含薄膜的防伪物。专利号：ZL200710122026.3, 发明人：李晓伟，李新宇，李策，杨琼，潘峰，李彩霞，曹瑜。
11. 磁性编码薄膜材料及其制备方法。专利号：ZL200710122027.8, 发明人：李晓伟，曹瑜，杨琼，李新宇，曾飞，潘峰。
12. 具有大压电常数和高电阻率的ZnO薄膜。专利号：ZL200710118646.X，发明人：潘峰;王旭波;曾飞，杨玉超。
13. 一种磁场调节中心频率的声表面波滤波器及其制备方法。专利号：ZL200810119667.8， 发明人：曾飞，潘峰。
14. 一种非易失性阻变存储器结构及其制备方法。专利号：ZL200910081636.2，发明人：潘峰，杨玉超，曾飞。
15. 一种提高ZnO薄膜材料的压电常数的方法。专利号：ZL201010170458.3，发明
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材料科技
